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RoHS
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Package TO-106-3 Domed
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANSISTOR NPN TO-106
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-106-3 Domed
Surface Mount NO
Transistor Element Material SILICON

Technical

Packaging Bulk
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code O-MBCY-W4
Qualification Status Not Qualified
Operating Temperature (Max) 125°C
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 600MHz
Frequency - Transition 600MHz
Power Dissipation-Max (Abs) 0.2W
Collector-Base Capacitance-Max 1.7pF

Compliance

RoHS Status Non-RoHS Compliant
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