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2N4250A

Central Semiconductor Corp
RoHS
/
Package TO-106-3 Domed
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANSISTOR PNP TO-106
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-106-3 Domed
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 60V
Transition Frequency 100MHz
Power Dissipation-Max (Abs) 0.2W

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