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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS PNP HIGH VOLTAGE DIE
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tray
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 350mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 20MHz
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