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BF723/ZLX

Nexperia USA Inc.
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description HIGH-VOLTAGE TRANSISTOR
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.2W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA
Voltage - Collector Emitter Breakdown (Max) 250V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 60MHz
Frequency - Transition 60MHz

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