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Transistors - Bipolar (BJT) - Single
6885-BC556B

6885-BC556B

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description BIPOLAR TRANSISTORS

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Inventory: 1580

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Technical

Operating Temperature 150°C TJ

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 500mW

Transistor Type PNP

DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V

Current - Collector Cutoff (Max) 15nA ICBO

Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) 65V

Current - Collector (Ic) (Max) 100mA

Frequency - Transition 150MHz

Alternative Model

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Ampleon USA Inc.

Microsemi Corporation

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Microsemi Corporation

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