MPS6652RLRA | Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Published 2006

JESD-609 Code e0

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Tin/Lead (Sn/Pb)

HTS Code 8541.21.00.95

Subcategory Other Transistors

Voltage - Rated DC -40V

Max Power Dissipation 625mW

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) 240

Reach Compliance Code not_compliant

Current Rating -1A

Time@Peak Reflow Temperature-Max (s) 30

Base Part Number MPS6652

Pin Count 3

JESD-30 Code O-PBCY-T3

Qualification Status Not Qualified

Number of Elements 1

Element Configuration Single

Transistor Application AMPLIFIER

Gain Bandwidth Product 100MHz

Polarity/Channel Type PNP

Transistor Type PNP

Collector Emitter Voltage (VCEO) 600mV

Max Collector Current 1A

DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 1V

Current - Collector Cutoff (Max) 100nA

Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A

Collector Emitter Breakdown Voltage 40V

Current - Collector (Ic) (Max) 1A

Transition Frequency 100MHz

Collector Emitter Saturation Voltage 600mV

Collector Base Voltage (VCBO) 45V

Emitter Base Voltage (VEBO) 4V

hFE Min 50

Turn Off Time-Max (toff) 300ns

Turn On Time-Max (ton) 55ns

Compliance

RoHS Status Non-RoHS Compliant

Lead Free Contains Lead