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Transistors - Bipolar (BJT) - Single
BC212_J35Z

BC212_J35Z

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS PNP 50V 0.3A TO-9

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package TO-92-3

Technical

Operating Temperature -55°C~150°C TJ

Packaging Bulk

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Base Part Number BC212

Power - Max 625mW

Transistor Type PNP

DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA 5V

Current - Collector Cutoff (Max) 15nA ICBO

Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) 50V

Current - Collector (Ic) (Max) 300mA

Alternative Model

Diodes Incorporated

Vishay Semiconductor Diodes Division

Panasonic Electronic Components

STMicroelectronics

Vishay Semiconductor Diodes Division

Taiwan Semiconductor Corporation

BZG03C18-HM3-18

Vishay Semiconductor Diodes Division

Nexperia USA Inc.

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