2N5401,116

NXP USA Inc.

RoHS

RoHS compliant

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS PNP 150V 0.3A TO-92

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount NO

Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ

Packaging Tape & Reel (TR)

Published 1999

JESD-609 Code e3

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Matte Tin (Sn)

HTS Code 8541.21.00.95

Subcategory Other Transistors

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) NOT SPECIFIED

Reach Compliance Code unknown

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Base Part Number 2N5401

Pin Count 3

JESD-30 Code O-PBCY-T3

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE

Power - Max 630mW

Transistor Application SWITCHING

Polarity/Channel Type PNP

Transistor Type PNP

DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V

Current - Collector Cutoff (Max) 50nA ICBO

Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) 150V

Current - Collector (Ic) (Max) 300mA

Transition Frequency 100MHz

Frequency - Transition 300MHz

Power Dissipation-Max (Abs) 0.63W

VCEsat-Max 0.5 V

Collector-Base Capacitance-Max 6pF

Compliance

RoHS Status ROHS3 Compliant

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