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SH8KA2GZETB

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description 30V NCH+NCH MIDDLE POWER MOSFET
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Inventory: 2565
Minimum: 1
Total Price: USD $1.28
Unit Price: USD $1.27512
≥1 USD $1.27512
≥10 USD $1.043196
≥100 USD $0.811364
≥500 USD $0.687714
≥1000 USD $0.560221

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2.8W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 2.6 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Compliance

RoHS Status ROHS3 Compliant
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