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SI4936BDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 6.9A 8-SOIC
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Inventory: 7403
Minimum: 1
Total Price: USD $1.17
Unit Price: USD $1.17348
≥1 USD $1.17348
≥10 USD $0.957264
≥100 USD $0.744744
≥500 USD $0.63124
≥1000 USD $0.514215

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4936
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 5.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 25 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 6.9A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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