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SI9926CDY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 8A 8-SOIC
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Inventory: 7239
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.207847
≥1 USD $0.207847
≥10 USD $0.201734
≥100 USD $0.195621
≥500 USD $0.18798

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 18mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.1W
Base Part Number SI9926
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Power Dissipation 3.1W
Turn On Delay Time 10 ns
Power - Max 3.1W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 18mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.2nF
FET Feature Logic Level Gate
Drain to Source Resistance 18mOhm
Rds On Max 18 mΩ

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