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SI7913DN-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Dual P-Channel 20 V 0.037 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8
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Inventory: 3273
Minimum: 1
Total Price: USD $8.8
Unit Price: USD $8.802938
≥1 USD $8.802938
≥10 USD $7.222898
≥100 USD $6.997463
≥500 USD $6.772028
≥1000 USD $6.545595

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 37mOhm
Subcategory Other Transistors
Max Power Dissipation 1.3W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7913
Pin Count 8
JESD-30 Code S-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 7.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Rise Time 70 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) -7.4A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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