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HP8M31TB1

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description HP8M31TB1 IS LOW ON-RESISTANCE A
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Inventory: 172
Minimum: 1
Total Price: USD $2.15
Unit Price: USD $2.15292
≥1 USD $2.15292
≥10 USD $1.786092
≥100 USD $1.421297
≥500 USD $1.202623
≥1000 USD $1.020401

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 3W Ta
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 8.5A, 10V, 70m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 470pF 2300pF @ 30V
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Gate Charge (Qg) (Max) @ Vgs 12.3nC, 38nC @ 10V
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.073Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 5.4 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Alternative Model

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