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FDPC8014S

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 25V 8PWRCLIP
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Inventory: 990
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.831294
≥1 USD $0.831294
≥10 USD $0.806844
≥100 USD $0.782394
≥500 USD $0.751832

Technical Details

Supply Chain

Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 207.7333mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2.3W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
Power - Max 2.1W 2.3W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2375pF @ 13V
Current - Continuous Drain (Id) @ 25°C 20A 41A
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 6 ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 110A
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 73 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Height 750μm
Length 5.1mm
Width 6.1mm

Alternative Model

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