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STL8DN10LF3

STMicroelectronics
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 100V 20A 5X6
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Inventory: 2957
Minimum: 1
Total Price: USD $2.41
Unit Price: USD $2.41164
≥1 USD $2.41164
≥10 USD $2.00046
≥100 USD $1.592329
≥500 USD $1.347358
≥1000 USD $1.143219

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101, STripFET? III
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Powers
Max Power Dissipation 70W
Terminal Form FLAT
Base Part Number STL8
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 8.7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Rise Time 9.6ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 5.2 ns
Turn-Off Delay Time 50.6 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 31.2A
Avalanche Energy Rating (Eas) 190 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

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