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EPC2100ENGRT

EPC
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description GANFET 2 N-CH 30V 9.5A/38A DIE
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta 40A Ta
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
Drain to Source Voltage (Vdss) 30V
FET Feature GaNFET (Gallium Nitride)

Compliance

RoHS Status ROHS3 Compliant
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