Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 1.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection ISOLATED
Turn On Delay Time 160 ns
Power - Max 1250W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 200A, 10V
Vgs(th) (Max) @ Id 4V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 40000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1360nC @ 10V
Rise Time 240ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 500 ns
Continuous Drain Current (ID) 495A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 1900A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard