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NTLJD2105LTBG

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description P-CHANNEL POWER MOSFET
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Inventory: 3574
Minimum: 1
Total Price: USD $17.4
Unit Price: USD $17.403383
≥1 USD $17.403383
≥10 USD $14.28021
≥100 USD $13.834328
≥500 USD $13.387448
≥1000 USD $12.941565

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 265
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-PDSO-C6
Qualification Status COMMERCIAL
Number of Elements 2
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 520mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.5A
Drain to Source Voltage (Vdss) 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.05Ohm
DS Breakdown Voltage-Min 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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