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SI4963BDY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 20V 4.9A 8-SOIC
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Inventory: 28279
Minimum: 1
Total Price: USD $0.2
Unit Price: USD $0.20349
≥1 USD $0.20349
≥10 USD $0.16758
≥100 USD $0.161595
≥500 USD $0.156608
≥1000 USD $0.15162

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 32mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4963
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 30 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 32m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.9A
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Rise Time 40 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.9A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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