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NTZD3154NT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description ON SEMICONDUCTOR - NTZD3154NT1G - Dual MOSFET, N Channel, 20 V, 540 mA, 0.4 ohm, SOT-563, Surface Mount
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Inventory: 523296
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.051408
≥1 USD $0.051408
≥500 USD $0.0378
≥1000 USD $0.0315
≥2000 USD $0.028896
≥5000 USD $0.027006

Technical Details

Supply Chain

Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 400MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 250mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 540mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTZD3154N
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 4 ns
Fall Time (Typ) 4 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 540mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.54A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Dimensions

Height 600μm
Length 1.7mm
Width 1.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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