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NTJD4152PT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 20V 0.88A SOT-363
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Inventory: 88055
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.145551
≥1 USD $0.145551
≥10 USD $0.137309
≥100 USD $0.129539
≥500 USD $0.12221
≥1000 USD $0.11529
≥3000 USD $0.108759

Technical Details

Supply Chain

Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)

Physical

Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 215MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 272mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -880mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD4152P
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 272mW
Turn On Delay Time 5.8 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 880mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Rise Time 6.5 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 13.5 ns
Continuous Drain Current (ID) 880mA
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.88A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 990.6μm
Length 2.1844mm
Width 1.3462mm

Alternative Model

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