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SI1539CDL-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30 Volts 0.7 Amps 0.34 Watts
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Inventory: 14664
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.052547
≥1 USD $0.052547
≥10 USD $0.051002
≥100 USD $0.049456
≥500 USD $0.047524

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 340mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 290mW
Turn On Delay Time 32 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 388m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 28pF @ 15V
Current - Continuous Drain (Id) @ 25°C 700mA 500mA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 19 ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 10 ns
Turn-Off Delay Time 4 ns
Continuous Drain Current (ID) 700mA
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.7A
Drain-source On Resistance-Max 0.388Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate

Dimensions

Height 1.1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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