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SI9933CDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description VISHAY - SI9933CDY-T1-GE3 - MOSFET, PP-CH, 20V, 4A, SO8
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Inventory: 7181
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.070088
≥1 USD $0.070088
≥10 USD $0.068027
≥100 USD $0.065965
≥500 USD $0.063389

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 58mOhm
Subcategory Other Transistors
Max Power Dissipation 3.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI9933
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 21 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 50 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 4A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.4 V

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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