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ZXMHC3A01N8TC

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N/2P-CH 30V 8-SOIC
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Inventory: 22896
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.417366
≥1 USD $0.417366
≥10 USD $0.405091
≥100 USD $0.392816
≥500 USD $0.377471

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 870mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXMHC3A01
Pin Count 8
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.36W
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.17A 1.64A
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Rise Time 2.3 ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 12.1 ns
Continuous Drain Current (ID) 1.64A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.17A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.5mm
Length 5mm
Width 4mm
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