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SI4931DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 12V 6.7A 8-SOIC
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Inventory: 2314
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.100078
≥1 USD $0.100078
≥10 USD $0.097135
≥100 USD $0.094191
≥500 USD $0.090512

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Base Part Number SI4931
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 25 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 8.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350μA
Current - Continuous Drain (Id) @ 25°C 6.7A
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
Rise Time 46ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) -8.9A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6.7A
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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