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FDMC8030

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
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Inventory: 4851
Minimum: 1
Total Price: USD $0.93
Unit Price: USD $0.927392
≥1 USD $0.927392
≥10 USD $0.874892
≥100 USD $0.825374
≥500 USD $0.778659
≥1000 USD $0.73458

Technical Details

Supply Chain

Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 hours ago)

Dimensions

Height 800μm
Length 3mm
Width 3mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature AVALANCHE RATED
Max Power Dissipation 800mW
Number of Elements 1
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN SOURCE
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 3 ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 50A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 30 pF

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 196mg
Transistor Element Material SILICON

Alternative Model

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