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SIA929DJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET -30V 64mOhm@10V 4.5A P-Ch G-III
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Inventory: 1270
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.56364
≥1 USD $0.56364
≥10 USD $0.491568
≥100 USD $0.340124
≥500 USD $0.284222
≥1000 USD $0.241894

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6 Dual
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.9W
Pin Count 6
Number of Elements 1
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Turn On Delay Time 5 ns
Power - Max 7.8W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 64m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.5A
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

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