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RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description QS8M31 IS COMPLEX TYPE MOSFET(P+
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Inventory: 6503
Minimum: 1
Total Price: USD $0.74
Unit Price: USD $0.7392
≥1 USD $0.7392
≥10 USD $0.643104
≥100 USD $0.445183
≥500 USD $0.371947
≥1000 USD $0.316553

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.1W Ta
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 112m Ω @ 3A, 10V, 210m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA, 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 270pF 750pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta 2A Ta
Gate Charge (Qg) (Max) @ Vgs 4nC, 7.2nC @ 5V
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.137Ohm
Pulsed Drain Current-Max (IDM) 6A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 1.4 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant
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