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SI6954ADQ-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30V 3.4A 1W
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Inventory: 23895
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.095808
≥1 USD $0.095808
≥10 USD $0.09299
≥100 USD $0.090172
≥500 USD $0.086649

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Dimensions

Height 1mm
Length 3mm
Width 4.4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 53mOhm
Terminal Finish MATTE TIN
Max Power Dissipation 830mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI6954
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Turn On Delay Time 12 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 53m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 3.1A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 10 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.1A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
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