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SI4228DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 25 Volts 8 Amps 3.1 Watts
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Inventory: 6335
Minimum: 1
Total Price: USD $0.77
Unit Price: USD $0.76692
≥1 USD $0.76692
≥10 USD $0.630168
≥100 USD $0.489905
≥500 USD $0.415282
≥1000 USD $0.338295

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 18MOhm
Terminal Finish PURE MATTE TIN
Max Power Dissipation 3.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4228
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 600 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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