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NTHD3100CT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 20V +3.9A/-4.4A Complementary
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Inventory: 7260
Minimum: 1
Total Price: USD $0.91
Unit Price: USD $0.91476
≥1 USD $0.91476
≥10 USD $0.751212
≥100 USD $0.58406
≥500 USD $0.495024
≥1000 USD $0.403253

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 hours ago)

Physical

Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 2.9A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD3100C
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 6.3 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A 3.2A
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Rise Time 11.7 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 11.7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 3.9A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.05mm
Length 3.05mm
Width 1.65mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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