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FDS8958A

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V 7A/5A 8SOIC
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Inventory: 5065
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.503727
≥1 USD $0.503727
≥10 USD $0.47522
≥100 USD $0.448319
≥500 USD $0.42294
≥1000 USD $0.399
≥3000 USD $0.376415

Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Technical

Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
Resistance 28mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 7A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A 5A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 13 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 54 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.9 V

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