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SI7228DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 26A PPAK 1212-8
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Inventory: 5357
Minimum: 1
Total Price: USD $5.64
Unit Price: USD $5.638868
≥1 USD $5.638868
≥10 USD $4.626405
≥100 USD $4.481768
≥500 USD $4.33713
≥1000 USD $4.192493

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Max Power Dissipation 23W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7228
Pin Count 8
JESD-30 Code S-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.6W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 15V
Current - Continuous Drain (Id) @ 25°C 26A
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 10 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 35A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Alternative Model

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