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SI7904BDN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET Dual N-Ch 20V 30mohm @ 4.5V
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Inventory: 2970
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.372081
≥1 USD $0.372081
≥10 USD $0.361137
≥100 USD $0.350193
≥500 USD $0.336514

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 30MOhm
Subcategory FET General Purpose Powers
Max Power Dissipation 2.5W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7904
Pin Count 8
JESD-30 Code S-XDSO-C6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
Power - Max 17.8W
FET Type 2 N-Channel (Dual)
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 30m Ω @ 7.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

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