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SI7904BDN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET Dual N-Ch 20V 30mohm @ 4.5V
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Inventory: 2970
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.372081
≥1 USD $0.372081
≥10 USD $0.361137
≥100 USD $0.350193
≥500 USD $0.336514

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 30MOhm
Subcategory FET General Purpose Powers
Max Power Dissipation 2.5W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7904
Pin Count 8
JESD-30 Code S-XDSO-C6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
Power - Max 17.8W
FET Type 2 N-Channel (Dual)
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 30m Ω @ 7.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON

Alternative Model

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