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DMN2011UFX-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 4-VFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 12.2A DFN2050-4
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Inventory: 2877
Minimum: 1
Total Price: USD $0.77
Unit Price: USD $0.76692
≥1 USD $0.76692
≥10 USD $0.66528
≥100 USD $0.460522
≥500 USD $0.384754
≥1000 USD $0.327456

Technical Details

Supply Chain

Factory Lead Time 23 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-VFDFN Exposed Pad

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation 2.1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 9.5m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12.2A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 12.2A
FET Feature Standard
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