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IPG20N10S4L22ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 8TDSON
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Inventory: 10048
Minimum: 1
Total Price: USD $1.09
Unit Price: USD $1.088371
≥1 USD $1.088371
≥10 USD $1.38852
≥100 USD $1.34463
≥500 USD $1.301738
≥1000 USD $1.257848

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series Automotive, AEC-Q101, OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 60W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Power Dissipation 60W
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 3ns
Fall Time (Typ) 18 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 175°C
FET Feature Logic Level Gate

Dimensions

Height 1mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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