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SIZF906DT-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2 N-CH 30V 60A POWERPAIR
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Inventory: 9910
Minimum: 1
Total Price: USD $9.07
Unit Price: USD $9.072263
≥1 USD $9.072263
≥10 USD $7.444343
≥100 USD $7.211925
≥500 USD $6.979508
≥1000 USD $6.746093

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TA
Packaging Tape & Reel (TR)
Series TrenchFET? Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N6
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 38W Tc 83W Tc
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 15A, 10V, 1.17m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V 8200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V, 92nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.0038Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 16 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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