Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Operating Mode ENHANCEMENT MODE
Power - Max 350mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 280mA
Gate Charge (Qg) (Max) @ Vgs 0.76nC @ 4.5V
Drain to Source Voltage (Vdss) 50V
Drain Current-Max (Abs) (ID) 0.28A
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.35W
FET Feature Standard