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IPG20N06S2L35ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 55V 20A TDSON-8-4
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Inventory: 17676
Minimum: 1
Total Price: USD $10.16
Unit Price: USD $10.161533
≥1 USD $10.161533
≥10 USD $8.338103
≥100 USD $8.076758
≥500 USD $7.81641
≥1000 USD $7.556063

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *PG20N06
JESD-30 Code R-PDSO-F
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 65W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 35m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 27μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.035Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 100 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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