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EPC2102ENGRT

EPC
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description GANFET 2 N-CHANNEL 60V 23A DIE
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V
Current - Continuous Drain (Id) @ 25°C 23A Tj
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)

Alternative Model

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