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EPC2101

EPC
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description TRANS GAN ASYMMETRICAL HALF BRID
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Pricing & Ordering
Inventory: 669
Minimum: 1
Total Price: USD $9
Unit Price: USD $8.99976
≥1 USD $8.99976
≥10 USD $7.71078
≥100 USD $6.425311

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9.5A 38A
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)

Compliance

RoHS Status ROHS3 Compliant
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