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NVMFD5852NLT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description NVMFD5852NLT1G Dual N-channel MOSFET Transistor, 44 A, 40 V, 8-Pin DFN
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Inventory: 1574
Minimum: 1
Total Price: USD $92.31
Unit Price: USD $92.306655
≥1 USD $92.306655
≥10 USD $89.329118
≥100 USD $86.35158
≥500 USD $77.41797

Technical Details

Supply Chain

Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 3.2W
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 6.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 40V
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 44A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.05mm
Length 6.1mm
Width 5.1mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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