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SI1028X-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
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Inventory: 27068
Minimum: 1
Total Price: USD $0.23
Unit Price: USD $0.232418
≥1 USD $0.232418
≥10 USD $0.19152
≥100 USD $0.185535
≥500 USD $0.17955
≥1000 USD $0.173565

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON

Dimensions

Height 600μm
Length 1.7mm
Width 1.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 220mW
Terminal Form FLAT
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 220mW
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 16pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 480mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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