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2N7002PV,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Dual N-Channel 60 V 330 mW 0.8 nC Silicon Surface Mount Mosfet - SOT-666
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Inventory: 1790
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.3696
≥1 USD $0.3696
≥10 USD $0.260568
≥100 USD $0.131578
≥500 USD $0.107332
≥1000 USD $0.07963
≥3000 USD $0.066999

Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 330mW
Terminal Form FLAT
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 390mW
Turn On Delay Time 3 ns
Power - Max 330mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Rise Time 4ns
Fall Time (Typ) 5 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 0.35A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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