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SI1926DL-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 60V 0.37A SOT363
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Inventory: 5095
Minimum: 1
Total Price: USD $0.02
Unit Price: USD $0.02207
≥1 USD $0.02207
≥10 USD $0.021421
≥100 USD $0.020772
≥500 USD $0.01996

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 510mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 340mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 370mA
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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