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PMDXB600UNELZ

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package 6-XFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description PMDXB600UNEL - 20 V, dual N-channel Trench MOSFET
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Inventory: 5142
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.351288
≥1 USD $0.351288
≥10 USD $0.331401
≥100 USD $0.312638
≥500 USD $0.294945
≥1000 USD $0.27825
≥3000 USD $0.2625

Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 380mW
Terminal Form NO LEAD
Pin Count 6
Reference Standard IEC-60134
JESD-30 Code R-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 380mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 600mA
Drain Current-Max (Abs) (ID) 0.6A
Drain-source On Resistance-Max 0.62Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant
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