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QS8J11TCR

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 12V 3.5A TSMT8
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation 550mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 8
JESD-30 Code R-PDSO-F8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 550mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Continuous Drain Current (ID) 3.5A
Drain-source On Resistance-Max 0.043Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.5V Drive

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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