Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
Termination SMD/SMT
Resistance 270mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 1.25W
Terminal Form GULL WING
Base Part Number IRF7506PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 9.7 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 9.3 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) -1.7A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 9.6A
Dual Supply Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1 V