Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 135mOhm
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC 30V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Current Rating 2.4A
Base Part Number IRF7503PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 4.7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 10 ns
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 2.4A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 14A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V