Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 13.4MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 2W
Current Rating 10A
Base Part Number IRF8910PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6.2 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 13.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 10ns
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 2.55V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.55 V